FQP33N10
Manufacturer:
On Semiconductor
Mfr.Part #:
FQP33N10
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 127 W 100 V Continuous Drain Current (ID):33 A 51 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.67 mm |
| Width | 4.83 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 52 mΩ |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 33 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 127 W |
| Power Dissipation | 127 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.5 nF |
| Continuous Drain Current (ID) | 33 A |
| Rds On Max | 52 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 80 ns |
| Element Configuration | Single |
| Fall Time | 110 ns |
| Rise Time | 195 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 51 nC |
| Drain to Source Resistance | 52 mΩ |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2 V |
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